| BFP 620 E7764 |
IC, Low Noise SiGe:C Bipolar RF Transistor 2.3V |
| BFP 620 H7764 |
IC, Low Noise SiGe:C Bipolar RF Transistor 2.3V, 80mA |
| BFP 640 E6327 |
IC, Low Noise Silicon Germanium Bipolar RF Transistor |
| BFP 640 H6327 |
IC, Low Noise Silicon Germanium Bipolar RF Transistor 4V, 50mA |
| BFP 640 H6433 |
IC, Low Noise Silicon Germanium Bipolar RF Transistor 4V, 50mA |
| BFP 640ESD H6327 |
IC, Robust Low Noise Silicon Germanium Bipolar RF Transistor 46GHz 4.7V |
| BFP 650 E6327 |
IC, High Linearity Silicon Germanium Bipolar RF Transistor 4.5V |
| BFP 650 H6327 |
IC, High Linearity Silicon Germanium Bipolar RF Transistor 4V, 150mA |
| BFP 720 H6327 |
IC, Low Noise Silicon Germanium Bipolar RF Transistor 45GHz 4.7V |
| BFP 720ESD H6327 |
IC, Robust High Performance Low Noise Bipolar RF Transistor 43GHz 4.7V |
| BFP 740 E6327 |
IC, Low Noise Silicon Germanium Bipolar RF Transistor 30mA |
| BFP 740 H6327 |
IC, Low Noise Silicon Germanium Bipolar RF Transistor 42GHz 4.7V |
| BFP 740ESD H6327 |
IC, Robust Low Noise Silicon Germanium Bipolar RF Transistor 42GHz 4.7V |
| BFP 840ESD H6327 |
IC, Robust Low Noise Silicon Germanium Bipolar RF Transistor |
| BFP 842ESD H6327 |
IC, Robust Low Noise Silicon Germanium Bipolar RF Transistor |
| BFP405E6327 |
IC, Low Noise Silicon Bipolar RF Transistor 4.5V |
| BFP420E6327 |
IC, Low Noise Silicon Bipolar RF Transistor 4.5V |
| BFP450E6327 |
IC, Linear Low Noise Silicon Bipolar RF Transistor 4.5V |
| BFP520E6327 |
IC, Low Noise Silicon Bipolar RF Transistor 2.5V |
| BFP760H6327XTSA1 |
IC, Low Noise Silicon Germanium Bipolar RF Transistor |
| BFP843FH6327XTSA1 |
IC, Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor |
| BFP843H6327XTSA1 |
IC, Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor |
| BGA 420 E6327 |
IC, Si-MMIC-Amplifier in SIEGET 25-Technologie 6V, 15mA |
| BGA 420 H6327 |
IC, Si-MMIC-Amplifier in SIEGET 25-Technologie 6V, 15mA |
| BGA 420 H6433 |
IC, Si-MMIC-Amplifier in SIEGET 25-Technologie 6V, 15mA |
| BGA 427 E6327 |
IC, Si-MMIC-Amplifier in SIEGET 25-Technologie |
| BGA 427 H6327 |
IC, Si-MMIC-Amplifier in SIEGET 25-Technologie 6V, 25mA |
| BGA 612 H6327 |
IC, Silicon Germanium Broadband MMIC Amplifier 80mA, 2.8V |
| BGA 614 H6327 |
IC, Silicon Germanium Broadband MMIC Amplifier 80mA, 3V |
| BGA 616 H6327 |
IC, Silicon Germanium Broadband MMIC Amplifier 80mA, 4.5V |
| BGA 622 E6327 |
IC, Silicon Germanium Wide Band Low Noise Amplifier with 2kV, ESD Protection |
| BGA 622 E6820 |
IC, Silicon Germanium Wide Band Low Noise Amplifier with 2kV, ESD Protection |
| BGA 622 H6820 |
IC, Silicon Germanium Wide Band Low Noise Amplifier with 2kV, ESD Protection |
| BGA612E6327 |
IC, Silicon Germanium Broadband MMIC Amplifier 80mA, 2.8V |
| BGA614E6327 |
IC, Silicon Germanium Broadband MMIC Amplifier 80mA, 3V |
| BGA616E6327 |
IC, Silicon Germanium Broadband MMIC Amplifier 80mA, 4.5V |
| BGB 420 E6327 |
IC, BGB420 Active Biased Transistor 6V, 15mA |
| BGB 540 E6327 |
IC, Active Biased RF Transistor |
| BGR 405 H6327 |
IC, NPN Silicon RF Transistor With Bias Circuitry 5V, 12MA |
| BGR 420 H6327 |
IC, NPN Silicon RF Transistor With Bias Circuitry 13V, 25mA |
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